P-N Junction Diode Construction and Biasing
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P–N Junction Diode Fundamentals
A p–n junction diode is constructed from a semiconductor crystal, typically silicon, although germanium and gallium arsenide are also utilized. Impurities are added to create two distinct regions. One side, called the n-type semiconductor, contains negative charge carriers (electrons). The other side, the p-type semiconductor, contains positive charge carriers (holes).
When these two materials (n-type and p-type) are joined, a momentary flow of electrons occurs from the n-side to the p-side. This results in a third region where no mobile charge carriers are present. This area is known as the depletion region due to the absence of free electrons and holes.
The diode's terminals are connected to the n-type and... Continue reading "P-N Junction Diode Construction and Biasing" »